Mo is considered an attractive material for future devices as a deposited metal in ultra-narrow lines and through holes.

Mo overcomes the disadvantage of a significant increase in resistivity of copper interconnects below 10 nm; Compared to W, Mo has a smaller EMFP(electron mean free path) at nearly the same low volume resistivity, so for films smaller than 10nm, Mo is expected to have a lower effective resistivity (product of volume resistivity and EMFP) than W. We can deposit Mo films through traditional CVD or ALD processes, but regionally selective deposition of metal films can significantly reduce process steps and provide new options for device integration.

Selective Molybdenum on TiNfor 3D NAND Application

Selective Molybdenum on Ru or Co for via fill in MOL/BEOL structures

Among the precursor materials of Mo, MoCl5 and MoO2Cl2 are the most promising. Both MoCl5 and MoO2Cl2 can deposit Mo films on metal and metal nitride surfaces by a regionally selective thermal ALD process. Hunan Huajing Powder Materials Co., Ltd. has been committed to the development and production of high-purity metal chloride products since 2007, and has been producing MoO2Cl2 and MoCl5 at 3-6N levels to meet the application requirements of catalysts, pharmaceuticals and semiconductors. At present, it has passed the product certification of some semiconductor material companies.

Photo of MoO2Cl2 Product

As a national high-tech enterprise, our company has a strong R & D team, established a complete R & D and analysis system, and can carry out professional customization for different needs of customers and provide quality services.